High brightness tapered lasers at 732 nm and 975 nm: Experiments and numerical analysis

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2002, Pages 89-90

  Borruel, L ^a   Sujecki, S ^b   Auzanneau, S C ^c   Sumpf, B ^d   Moreno, P ^a   Wykes, J ^b   Krakowski, M ^c   Erbert, G ^d   Rodriguez D ^a   Sewell, P ^b   Calligaro, M ^c   Wenzel, H ^d   Benson, T M ^b   Larkins, E C ^b   Esquivias, I ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c THALES RESEARCH AND TECHNOLOGY   (France)

^d FBI fur Hochstfrequenztechnik   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; CLADDING (COATING); COMPUTER SIMULATION; HEAT SINKS; LASER BEAMS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

TAPERED LASERS;

SEMICONDUCTOR LASERS;

EID: 0036450508     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Mikulla et al., "25-W high-brightness tapered semiconductor laser-array," IEEE Photon. Technol. Lett., vol. 11, pp. 412-414, 1999.
2. K.A. Williams et al., "Design of High-Brightness Tapered Laser Arrays", IEEE J. of Selec. Tops. in Quantum Electron. 5, pp. 822-831, 1999.
3. B. Sumpf et al., "High-brightness 735 nm tapered diode lasers," Electron. Lett., 38, pp.183-184, 2002.
4. M. Krakowski, et al., "High power and high brightness laser diode structures at 980nm using Al-free materials," Proc. of SPIE (to be published), vol. 4651, 2002.
5. L. Borruel et al., "Selfconsistent Electrical, Thermal and Optical Model of High Brightness Tapered Lasers" Proc. of SPIE (to be published), vol. 4651, 2002.