5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm

IEEE Photonics Technology Letters

Volumn 9, Issue 9, 1997, Pages 1217-1219

  O'Brien, S ^a,b   Schoenfelder, A ^b   Lang, R J ^a,b  

^a IEEE   (United States)

^b SDL INC   (United States)

Author keywords

Diffraction limited; High power; Laser; Optical amplifier

Indexed keywords

ELECTROMAGNETIC WAVE DIFFRACTION; HIGH POWER LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS;

BROAD AREA FLARED AMPLIFIERS;

CONTINUOUS WAVE LASERS;

EID: 0031233123     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.618483     Document Type: Article

References (6)

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2. E. Kintzer, J. N. Walpole, S. R. Chinn, C. A. Wang, and L. J. Missagia, "High power, strained-layer amplifiers and lasers with tapered gain regions," IEEE Photon. Technol. Lett., vol. 5, pp. 605-608, 1993.
3. S. O'Brien, R. Lang, R. Parke, J. Major, D. F. Welch, and D. Mehuys, "2.2-W continuous-wave , diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm," IEEE Photon. Technol. Lett., vol. 9, pp. 440-442, Apr. 1997.
4. D. Mehuys, L. Goldberg, R. Waarts, and D. F. Welch, "4.5 W CW near-diffraction-limited tapered-stripe semiconductor optical amplifier," Electron. Lett., vol. 29, pp. 219-221, 1993.
5. D. Mehuys, L. Goldberg, and D.F. Welch, "5.25-W CW near-diffraction-limited tapered-stripe semiconductor optical amplifier," IEEE Photon. Technol. Lett., vol. 5, pp. 1179-1182, 1993.
6. S. O'Brien, D. F. Welch, R. Parke, D. Mehuys, K. Dzurko, R. J. Lang, R. Waarts, and D. Scifres, "Operating characteristics of a high-power monolithically-integrated flared amplifier master oscillator power amplifier," IEEE J. Quantum Electron., vol. 29, pp. 2052-2057, 1993.