Characterizing positive chemically amplified resists via in-situ impedance monitoring

Journal of Microlithography, Microfabrication and Microsystems

Volumn 4, Issue 3, 2005, Pages

  Liu, Chao ^a   Cheng, Mosong ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

Author keywords

Acid diffusion; Capacitance; Chemically amplified resist; Deprotection; Free volume; Parameter extraction; Postexposure bake; Resist shrinkage; Resistance

Indexed keywords

ACID DIFFUSION; CHEMICALLY AMPLIFIED RESIST; DEPROTECTION; FREE VOLUME; IN-SITU IMPEDANCE MONITORING; PARAMETER EXTRACTION; PHOTOACID DIFFUSION; POSTEXPOSURE BAKE; RESIST SHRINKAGE; RESISTANCE;

ACIDS; CAPACITANCE; IN SITU PROCESSING; PERMITTIVITY;

DIFFUSION;

EID: 33644779107     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.2037407     Document Type: Article

References (15)

1. G. Wallraff, J. Hutchinson, W. Hinsberg, F. Houle, P. Seidel, R. Johnson, and W. Oldham, "Thermal and acid-catalyzed deprotection kinetics in candidate deep ultraviolet resist materials," J. Vac. Sci. Technol. B 12, 3857-3862 (1994).
2. W. D. Hinsberg, F. A. Houle, M. I. Sanchez, and G. M. Wallraff, "Chemical and physical aspects of the postexposure baking process used for positive-tone chemically amplified resists," IBM J. Res. Dev. 45, 667-682 (2001).
3. L. Schlegel, T. Ueno, N. Hayashi, and T. Iwayanagi, "Determination of acid diffusion in chemical amplification positive deep ultraviolet resists," J. Vac. Sci. Technol. B 9, 278-289 (1991).
4. M. Zuniga and A. R. Neureuther, "Reaction-diffusion modeling and simulations in positive deep ultraviolet resists," J. Vac. Sci. Technol. B 13, 2957-2962 (1995).
5. S. Postnikov, M. Stewart, H. Tran, M. Nierode, D. R. Medeiros, T. Cao, J. Byers, S. Webber, and C. G. Wilson, "Study of resolution limits due to intrinsic bias in chemically amplified photoresists," J. Vac. Sci. Technol. B 17, 3335-3338 (1999).
6. A. A. Krasnoperova, M. Khan, S. Rhyner, J. W. Taylor, Y. Zhu, and F. Cerrina, "Modeling and simulations of a positive chemically amplified photoresist for x-ray lithography," J. Vac. Sci. Technol. B 12, 3900-3904 (1994).
7. J. L. P. Jessop, S. N. Goldie, A. B. Scranton, and G. J. Blanchard, "Spectroscopic characterization of acid generation and concentration and free volume evolution in chemically amplified resists," J. Vac. Sci. Technol. B 20, 219-225 (2002).
8. J. Nakamura, H. Ban, K. Deguchi, and A. Tanaka, "Effect of acid diffusion on resolution of a chemically amplified resist in x-ray lithography," Jpn. J. Appl. Phys., Part 1 30, 2619-2625 (1991).
9. T. H. Fedynyshyn, J. W. Thackeray, J. H. Georger, and M. D. Denison, "Effect of acid diffusion on performance in positive deep ultraviolet resists," J. Vac. Sci. Technol. B 12, 3888-3894 (1994).
10. T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, "A study of acid diffusion in chemically amplified deep ultraviolet resist," J. Vac. Sci. Technol. B 14, 4226-4228 (1996).
11. F. A. Houle, W. D. Hinsberg, M. Morrison, M. I. Sanchez, G. Wallraff, C. Larson, and J. Hoffnagle, "Determination of coupled acid catalysis-diffusion processes in a positive-tone chemically amplified photoresist," J. Vac. Sci. Technol. B 18, 1874-1885 (2000).
12. Irradiation of Polymeric Materials: Processes, Mechanisms, and Applications, E. Reichmanis, C. W. Frank, and J. H. O'Donnell, Eds., American Chemical Society, Washington, DC (1993).
13. M. Cheng, L. Yuan, E. Croffie, and A. R. Neureuther, "Improving resist resolution and sensitivity via electric-field enhanced postexposure baking," J. Vac. Sci. Technol. B 20, 734-740 (2002).
14. E. Croffie, M. Cheng, and A. R. Neureuther, "Moving boundary transport model for acid diffusion in chemically amplified resists," J. Vac. Sci. Technol. B 17, 3339-3344 (1999).
15. N. Jakatdar, J. Bao, C. Spanos, R. Subramanian, and B. Rangarajan, "Physical modeling of deprotection-induced thickness loss," Proc. SPIE 3678, 275-282 (1999).