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Volumn 21, Issue 1, 2006, Pages 209-214

Growth stresses and viscosity of thermal oxides on silicon and polysilicon

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; MICROELECTROMECHANICAL DEVICES; OXIDATION; POLYSILICON; SINGLE CRYSTALS; STRAIN GAGES; VISCOELASTICITY;

EID: 33644521222     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0017     Document Type: Article
Times cited : (11)

References (31)
  • 1
    • 1642621158 scopus 로고
    • General relationship for the thermal oxidation of silicon
    • B.E. Deal and A.S. Grove: General relationship for the thermal oxidation of silicon. J. Appl. Phys. 36, 3770 (1965).
    • (1965) J. Appl. Phys. , vol.36 , pp. 3770
    • Deal, B.E.1    Grove, A.S.2
  • 2
    • 0001408260 scopus 로고
    • The oxidation of metals at high temperatures
    • N.B. Pilling and R.E. Bedworth: The oxidation of metals at high temperatures. J. Inst. Met. 29, 529 (1923).
    • (1923) J. Inst. Met. , vol.29 , pp. 529
    • Pilling, N.B.1    Bedworth, R.E.2
  • 3
    • 0000233879 scopus 로고
    • Stresses and silicon interstitials during the oxidation of a silicon substrate
    • B. Leroy: Stresses and silicon interstitials during the oxidation of a silicon substrate. Philos. Mag. B 55, 159 (1987).
    • (1987) Philos. Mag. B , vol.55 , pp. 159
    • Leroy, B.1
  • 4
    • 0019565720 scopus 로고
    • The growth of oxidation stacking faults and the point defect generation at Si-SiO interface during thermal oxidation of silicon
    • A.M-R. Lin, R.W. Dutton, D.A. Antoniadis, and W.A. Tiller: The growth of oxidation stacking faults and the point defect generation at Si-SiO interface during thermal oxidation of silicon. J. Electrochem. Soc. 128, 1121 (1981).
    • (1981) J. Electrochem. Soc. , vol.128 , pp. 1121
    • Lin, A.M.-R.1    Dutton, R.W.2    Antoniadis, D.A.3    Tiller, W.A.4
  • 5
    • 0018736906 scopus 로고
    • Kinetics of growth of the oxidation stacking faults
    • B. Leroy: Kinetics of growth of the oxidation stacking faults. J. Appl. Phys. 50, 7996 (1979).
    • (1979) J. Appl. Phys. , vol.50 , pp. 7996
    • Leroy, B.1
  • 6
    • 0001290968 scopus 로고
    • Point-defect generation during oxidation of silicon in dry oxygen. I. Theory
    • S.T. Dunham and J.D. Plummer: Point-defect generation during oxidation of silicon in dry oxygen. I. Theory. J. Appl. Phys. 59, 2541 (1986).
    • (1986) J. Appl. Phys. , vol.59 , pp. 2541
    • Dunham, S.T.1    Plummer, J.D.2
  • 8
    • 0020930389 scopus 로고
    • Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow
    • A. Fargeix and G. Ghibaudo: Dry oxidation of silicon: a new model of growth including relaxation of stress by viscous flow. J. Appl. Phys. 54, 7153 (1983).
    • (1983) J. Appl. Phys. , vol.54 , pp. 7153
    • Fargeix, A.1    Ghibaudo, G.2
  • 9
    • 0040804716 scopus 로고
    • New results on low-temperature thermal oxidation of silicon
    • E.A. Irene: New results on low-temperature thermal oxidation of silicon. Philos. Mag. B. 55, 131 (1987).
    • (1987) Philos. Mag. B. , vol.55 , pp. 131
    • Irene, E.A.1
  • 10
    • 0003026898 scopus 로고
    • 2 film stress distribution during thermal oxidation of Si
    • 2 film stress distribution during thermal oxidation of Si. J. Vac. Sci. Technol. B 6, 574 (1988).
    • (1988) J. Vac. Sci. Technol. B , vol.6 , pp. 574
    • Kobeda, E.1    Irene, E.A.2
  • 11
    • 0023855615 scopus 로고
    • Two-dimensional thermal oxidation of silicon-II. Modeling stress effects in wet oxides
    • D-B. Kao, J.P. McVittie, W.D. Nix, and K.C. Saraswat: Two-dimensional thermal oxidation of silicon-II. Modeling stress effects in wet oxides. IEEE Trans. Elec. Dev. ED-35, 25 (1988).
    • (1988) IEEE Trans. Elec. Dev. , vol.ED-35 , pp. 25
    • Kao, D.-B.1    McVittie, J.P.2    Nix, W.D.3    Saraswat, K.C.4
  • 17
    • 33745905893 scopus 로고
    • Stress-related problems in silicon technology
    • S.M. Hu: Stress-related problems in silicon technology. J. Appl. Phys. 70, R53 (1991).
    • (1991) J. Appl. Phys. , vol.70
    • Hu, S.M.1
  • 18
    • 0028443629 scopus 로고
    • Characterization of stress generated in polycrystalline silicon during thermal oxidation by laser Raman spectroscopy
    • M. Kawata and T. Katoda: Characterization of stress generated in polycrystalline silicon during thermal oxidation by laser Raman spectroscopy. J. Appl. Phys. 75, 7456 (1994).
    • (1994) J. Appl. Phys. , vol.75 , pp. 7456
    • Kawata, M.1    Katoda, T.2
  • 19
    • 19644372051 scopus 로고    scopus 로고
    • Dry thermal oxidation of polycrystalline and amorphous silicon films for applications to thin film transistors
    • M. Miyasaka, W. Itoh, H. Ohshima, and T. Shimoda: Dry thermal oxidation of polycrystalline and amorphous silicon films for applications to thin film transistors. Jpn. J. Appl. Phys. 37, 1076 (1998).
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 1076
    • Miyasaka, M.1    Itoh, W.2    Ohshima, H.3    Shimoda, T.4
  • 20
    • 0342626602 scopus 로고    scopus 로고
    • Influence of anneals in oxygen ambient on stress of thick polysilicon layers
    • M. Furtsch, M. Offenberg, H. Munzel, and J.R. Morante: Influence of anneals in oxygen ambient on stress of thick polysilicon layers. Sens. Actuators A 76, 335 (1999).
    • (1999) Sens. Actuators A , vol.76 , pp. 335
    • Furtsch, M.1    Offenberg, M.2    Munzel, H.3    Morante, J.R.4
  • 21
    • 0037044914 scopus 로고    scopus 로고
    • Fatigue failure in polysilicon not due to simple stress-corrosion cracking
    • H. Kahn, R. Ballarini, J.J. Bellante, and A.H. Heuer: Fatigue failure in polysilicon not due to simple stress-corrosion cracking. Science 298, 1215 (2002).
    • (2002) Science , vol.298 , pp. 1215
    • Kahn, H.1    Ballarini, R.2    Bellante, J.J.3    Heuer, A.H.4
  • 22
    • 0003532560 scopus 로고    scopus 로고
    • (Kluwer Academic Publishers, Boston, MA)
    • S.D. Senturia: Microsystem Design (Kluwer Academic Publishers, Boston, MA, 2001).
    • (2001) Microsystem Design
    • Senturia, S.D.1
  • 24
    • 0010039920 scopus 로고    scopus 로고
    • The thermophysical properties (heat capacity and thermal expansion) of single-crystal silicon
    • V.M. Glazov and A.S. Pashinkin: The thermophysical properties (heat capacity and thermal expansion) of single-crystal silicon. High Temp. 39, 413 (2001).
    • (2001) High Temp. , vol.39 , pp. 413
    • Glazov, V.M.1    Pashinkin, A.S.2
  • 27
    • 0032118294 scopus 로고    scopus 로고
    • Molecular-dynamics simulation of grain-boundary diffusion creep
    • P. Keblinski, D. Wolf, and H. Gleiter: Molecular-dynamics simulation of grain-boundary diffusion creep. Interface Sci. 6, 205 (1998).
    • (1998) Interface Sci. , vol.6 , pp. 205
    • Keblinski, P.1    Wolf, D.2    Gleiter, H.3
  • 28
    • 0035880980 scopus 로고    scopus 로고
    • Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation
    • M.S. Carroll, J.S. Sturm, and T. Buyuklimanli: Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation. Phys. Rev. B 64, 085316 (2001).
    • (2001) Phys. Rev. B , vol.64 , pp. 085316
    • Carroll, M.S.1    Sturm, J.S.2    Buyuklimanli, T.3
  • 29
    • 0343534617 scopus 로고    scopus 로고
    • Silicon interstitial trapping in polycrystalline silicon films studied by monitoring interstitial reactions with underlying insulating films
    • D. Tsoukalas and D. Kouvatsos: Silicon interstitial trapping in polycrystalline silicon films studied by monitoring interstitial reactions with underlying insulating films. Appl. Phys. Lett. 68, 1549 (1996).
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 1549
    • Tsoukalas, D.1    Kouvatsos, D.2
  • 30
    • 0035439352 scopus 로고    scopus 로고
    • Interferometry of actuated microcantilevers to determine material properties and test structure nonidealities in MEMS
    • B.D. Jensen, M.P. de Boer, N.D. Masters, F. Bitsie, and D. LaVan: Interferometry of actuated microcantilevers to determine material properties and test structure nonidealities in MEMS. J. Microelectromech. Syst. 10, 336 (2001).
    • (2001) J. Microelectromech. Syst. , vol.10 , pp. 336
    • Jensen, B.D.1    de Boer, M.P.2    Masters, N.D.3    Bitsie, F.4    La Van, D.5
  • 31
    • 0036648809 scopus 로고    scopus 로고
    • Thermal expansion of LPCVD polysilicon films
    • H. Kahn, R. Ballarini, and A.H. Heuer: Thermal expansion of LPCVD polysilicon films. J. Mater. Res. 17, 1855 (2002).
    • (2002) J. Mater. Res. , vol.17 , pp. 1855
    • Kahn, H.1    Ballarini, R.2    Heuer, A.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.