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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages

Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation

(3) Carroll, M S a Sturm, J C a Buyuklimanli T b

a Princeton University (United States)

b Evans East (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; SILICON;

ARTICLE; CALCULATION; CONCENTRATION (PARAMETERS); MEASUREMENT; OXIDATION; PLOTS AND CURVES; SURFACE PROPERTY;

EID: 0035880980 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.64.085316 Document Type: Article

Times cited : (7)

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