Investigation of electroluminescence across 4H-SiC p+/n-/n+ structures using optical emission microscopy

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 389-392

  Galeckas, A ^a   Linnros, J ^a   Breitholtz, B ^a,b   Bleichner, H ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ELECTRON TRAPS; ELECTRONIC STRUCTURE; IMAGING TECHNIQUES; LIGHT EMISSION; OPTICAL MICROSCOPY; THERMAL EFFECTS;

CARRIER DIFFUSION; CARRIER RECOMBINATION; CARRIER TRAPPING; OPTICAL EMISSION MICROSCOPY;

SILICON CARBIDE;

EID: 0035126749     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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