Growth and modification of thin SiGeC films at low substrate temperatures through UV laser assisted processing

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 422-428

  Lopez E ^a   Chiussi, S ^a   Serra, J ^a   Gonzalez P ^a   Serra, C ^a   Kosch, U ^a   Leon B ^a   Fabbri, F ^b   Fornarini, L ^b   Martelli, S ^c  

^a UNIVERSITY OF VIGO   (Spain)

^b ENEA   (Italy)

^c CENTRO SVILUPPO MATERIALI S P A   (Italy)

Author keywords

Excimer laser; Laser CVD; PLIE; SiGeC; Thin film processing

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; EXCIMER LASERS; GERMANIUM COMPOUNDS; MICROELECTRONICS; PHOTODETECTORS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SOLAR CELLS; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

LASER CVD; MODIFICATIONS; PLIE; SIGEC; THIN FILM PROCESSING;

THIN FILMS;

EID: 3342974678     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.053     Document Type: Conference Paper

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