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Volumn 208-209, Issue 1, 2003, Pages 358-363
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Influence of laser fluence in ArF-excimer laser assisted crystallisation of a-SiGe:H films
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Author keywords
A SiGe:H; ArF excimer laser; Excimer laser crystallisation; Laser CVD; Poly SiGe
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Indexed keywords
AMORPHOUS FILMS;
CRYSTALLIZATION;
EXCIMER LASERS;
GRAIN SIZE AND SHAPE;
POLYCRYSTALLINE MATERIALS;
SILICON COMPOUNDS;
BOLOMETERS;
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
HYDROGENATION;
IRRADIATION;
LASER PULSES;
MICROELECTRONICS;
SILICON ALLOYS;
SILICON SOLAR CELLS;
STRUCTURE (COMPOSITION);
SURFACES;
THIN FILM TRANSISTORS;
LASER FLUENCE;
MICROBOLOMETERS;
THIN FILMS;
POLYCRYSTALLINE MATERIALS;
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EID: 0037443225
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(02)01399-5 Document Type: Conference Paper |
Times cited : (13)
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References (15)
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