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Volumn 208-209, Issue 1, 2003, Pages 358-363

Influence of laser fluence in ArF-excimer laser assisted crystallisation of a-SiGe:H films

Author keywords

A SiGe:H; ArF excimer laser; Excimer laser crystallisation; Laser CVD; Poly SiGe

Indexed keywords

AMORPHOUS FILMS; CRYSTALLIZATION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS; BOLOMETERS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; HYDROGENATION; IRRADIATION; LASER PULSES; MICROELECTRONICS; SILICON ALLOYS; SILICON SOLAR CELLS; STRUCTURE (COMPOSITION); SURFACES; THIN FILM TRANSISTORS;

EID: 0037443225     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01399-5     Document Type: Conference Paper
Times cited : (13)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.