Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 57-60

  Noda, Takaaki ^a   Lee, Doohwan ^a   Shim, Hyunyoung ^a   Sakuraba, Masao ^a   Matsuura, Takashi ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

LANGMUIR-TYPE ADSORPTION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING FILMS;

EID: 0034499870     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01469-3     Document Type: Article

References (9)

1. Atmon Z., Bair A.E., Jaquez E.J., Mayer I.W., Chandrasekhar D., Smith D.J., Hervig R.L., Robinson McD. Appl. Phys. Lett. 65:1994;2559.
2. Soref R.A. J. Appl. Phys. 70:1991;2470.
3. Osten H.J., Heinemann B., Knoll D., Lippert G., Rücker H. J. Vac. Sci. Technol. B16:(3):1998;1750.
4. Murota J., Sakuraba M., Matsuura T. Defects in Silicon III, PV99-1. 1999;189 Electrochemical Society, Pennington.
5. Ichikawa A., Hirose Y., Ikeda T., Noda T., Fujiu M., Takatsuka T., Moriya A., Sakuraba M., Matsuura T., Murota J. Thin Solid Films. 369:2000;167.
6. Murota J., Ono S. Jpn. J. Appl. Phys. 1:(33):1994;2290.
7. Sze S.M. Physics of Semiconductor Devices, 2nd Ed. 1981;32 John Wiley & Sons, New York.
8. Handbook of Chemistry and Physics, 79th Ed., CRC Press, Boca Raton, 1998, p. 9-1.
9. Sze S.M. Physics of Semiconductor Devices, 2nd Ed. 1981;848 John Wiley & Sons, New York.