Si-substitutional defects on the α-Sn/Si(1 1 1)- (√3×√3) surface

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 286-291

  Kaminski, Wojciech ^a,b   Jelinek, Pavel ^a,c   Perez R ^a   Flores, Fernando ^a   Ortega, José ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITY OF WROC AW   (Poland)

^c INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; FERMI LEVEL; GROUND STATE; IMAGE ANALYSIS; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA;

CHARGE DENSITY WAVE; DEFECT CONCENTRATION; ELECTRONIC ENERGY GAIN; SI-SUBSTITUTIONAL DEFECTS;

SILICON;

EID: 3342935839     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.083     Document Type: Conference Paper

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