Ge substitutional defects and the √3 × √3 ↔ 3 × 3 transition in α-Sn/Ge(111)

Journal of Physics Condensed Matter

Volumn 14, Issue 30, 2002, Pages 7147-7154

  Ortega, José ^a   Pérez, Rubén ^a   Jurczyszyn, Leszek ^a,b   Flores, Fernando ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITY OF WROC AW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; GERMANIUM; GROUND STATE; LOW TEMPERATURE EFFECTS; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; TIN;

DANGLING BONDS; HONEYCOMB LATTICES;

SURFACE PHENOMENA;

EID: 0037026012     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/30/305     Document Type: Article

References (13)