Electrical characterisation of the gamma and UV Irradiated epitaxial 1.2 kV 4H-SiC PiN diodes

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1487-1490

  Wolborski, M ^a   Bakowski, M ^a   Klamra, W ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; Gamma irradiation; PiN diodes; Thermal activation energy; UV irradiation

Indexed keywords

ACTIVATION ANALYSIS; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; DOSIMETERS; ELECTRIC IMPEDANCE; GAMMA RAYS; LEAKAGE CURRENTS; ULTRAVIOLET RADIATION;

4H-SIC; GAMMA IRRADIATION; PIN DIODES; THERMAL ACTIVATION ENERGY; UV IRRADIATION;

SILICON CARBIDE;

EID: 8744310135     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1487     Document Type: Conference Paper

References (6)

1. Pierre Masri; Surface Science Reports 48 (2002) 1-51
2. F. Nava, E. Vittone, P. Vanni, G. Verzellesi, P.G. Fuochi, C. Lanzieri, M. Glaser; Nuclear Instruments and Methods in Physics Research A, Article in press
3. U. Zimmermann, A. Hallen, B. Breitholtz; Materials Sc. Forum 338-342 (2000) p. 1323
4. R.Patel, V.Khemka, N.Ramungul, T.P.Chow, M.Ghezzo and J.Kretchmer; Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, p. 387.
5. T. Dalibor, G. Pensl, T. Kimoto, H. Matsunami, S. Sridhara, R.P. Devaty, W.J. Choyke; Diamond and related materials 6 (1997) p. 1333
6. Qing-An Huang, Dayou Sun and Jonny K.O.Sin; Applied Surface Science 171 (2001) p. 57.