Proton damage effects in high performance P-channel CCDs

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2695-2702

  Spratt, James P ^a,b   Conger, Chris ^c   Bredthauer, Richard ^a,d   Byers, Wheaton ^c   Groulx, Robert ^a,e   Leadon, Roland ^b   Clark, Henry ^a,b,f  

^a IEEE   (United States)

^b Full Circle Research Inc ^*  (United States)

^c SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

^d Semiconductor Technology Associates   (United States)

^e DALSA Semiconductor Inc   (Canada)

^f TEXAS A AND M UNIVERSITY   (United States)

Author keywords

Charge transfer efficiency; Displacement damage hardened imagers; P channel CCDs

Indexed keywords

CHARGE TRANSFER EFFICIENCY; N-CHANNEL CCD; PROTON DAMAGE EFFECTS;

CHARGE COUPLED DEVICES; CHARGE TRANSFER; HARDNESS;

PROTONS;

EID: 33144477061     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860738     Document Type: Conference Paper

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