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Volumn 52, Issue 6, 2005, Pages 2475-2480

Catastrophic latchup in a CMOS operational amplifier

Author keywords

Amplifier; Cyclotron; Heavy ion; Latchup; LTC2052; SEE

Indexed keywords

AMPLIFIERS (ELECTRONIC); HEAVY IONS; IONS; OPTICAL IMAGE STORAGE;

EID: 33144472876     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860676     Document Type: Conference Paper
Times cited : (8)

References (16)
  • 1
    • 0022866162 scopus 로고
    • Theory of single event latchup in complementary metal-oxide semiconductor integrated circuits
    • Dec.
    • M. Shoga and D. Binder, "Theory of single event latchup in complementary metal-oxide semiconductor integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-33, no. 6, pp. 1714-1717, Dec. 1986.
    • (1986) IEEE Trans. Nucl. Sci. , vol.NS-33 , Issue.6 , pp. 1714-1717
    • Shoga, M.1    Binder, D.2
  • 2
    • 0022908702 scopus 로고
    • The effect of elevated temperature on latchup and bit errors in CMOS devices
    • Dec.
    • W. A. Kolasinski, R. Koga, E. Schnaur, and J. Duffey, "The effect of elevated temperature on latchup and bit errors in CMOS devices," IEEE Trans. Nucl. Sci., vol. NS-33, no. 6, pp. 1605-1609, Dec. 1986.
    • (1986) IEEE Trans. Nucl. Sci. , vol.NS-33 , Issue.6 , pp. 1605-1609
    • Kolasinski, W.A.1    Koga, R.2    Schnaur, E.3    Duffey, J.4
  • 3
    • 0015770573 scopus 로고
    • Latchup in CMOS integrated circuits
    • Dec.
    • B. L. Gregory and B. D. Shafer, "Latchup in CMOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-20, no. 6, pp. 293-299, Dec. 1973.
    • (1973) IEEE Trans. Nucl. Sci. , vol.NS-20 , Issue.6 , pp. 293-299
    • Gregory, B.L.1    Shafer, B.D.2
  • 4
    • 0022883491 scopus 로고
    • Discovery of heavy-ion latchup in CMOS/EPI devices
    • W. E. Price et al., "Discovery of heavy-ion latchup in CMOS/EPI devices," IEEE Trans. Nucl. Sci., vol. NS-33, p. 1696, 1986.
    • (1986) IEEE Trans. Nucl. Sci. , vol.NS-33 , pp. 1696
    • Price, W.E.1
  • 5
    • 0024104904 scopus 로고
    • Dynamics of heavy-ion-induced latchup in CMOS structures
    • Nov.
    • T. Aoki, "Dynamics of heavy-ion-induced latchup in CMOS structures," IEEE Trans. Electron Dev., vol. ED-35, no. 11, pp. 1885-1891, Nov. 1988.
    • (1988) IEEE Trans. Electron Dev. , vol.ED-35 , Issue.11 , pp. 1885-1891
    • Aoki, T.1
  • 6
    • 0025682739 scopus 로고
    • Latchup in CMOS from single particles
    • Dec.
    • A. H. Johnston and B. W. Hughlock, "Latchup in CMOS from single particles," IEEE Trans. Nucl. Sci., vol. 37, no. 6, pp. 1886-1893, Dec. 1990.
    • (1990) IEEE Trans. Nucl. Sci. , vol.37 , Issue.6 , pp. 1886-1893
    • Johnston, A.H.1    Hughlock, B.W.2
  • 8
    • 0026370425 scopus 로고
    • Effect of temperature on single-particle latchup
    • Dec.
    • A. H. Johnston, B. W. Hughlock, M. P. Baze, and R. E. Plaag, "Effect of temperature on single-particle latchup," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1435-1441, Dec. 1991.
    • (1991) IEEE Trans. Nucl. Sci. , vol.38 , Issue.6 , pp. 1435-1441
    • Johnston, A.H.1    Hughlock, B.W.2    Baze, M.P.3    Plaag, R.E.4
  • 9
    • 0036956113 scopus 로고    scopus 로고
    • Latent damage in CMOS devices from single-event latchup
    • Dec.
    • H. N. Becker, T. F. Miyahira, and A. H. Johnston, "Latent damage in CMOS devices from single-event latchup," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3009-3015, Dec. 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , Issue.6 , pp. 3009-3015
    • Becker, H.N.1    Miyahira, T.F.2    Johnston, A.H.3
  • 11
    • 0031354388 scopus 로고    scopus 로고
    • Latchup in integrated circuits from energetic protons
    • Dec.
    • A. H. Johnston, G. M. Swift, and L. D. Edmonds, "Latchup in integrated circuits from energetic protons," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2367-2377, Dec. 1997.
    • (1997) IEEE Trans. Nucl. Sci. , vol.44 , Issue.6 , pp. 2367-2377
    • Johnston, A.H.1    Swift, G.M.2    Edmonds, L.D.3
  • 12
    • 0020942842 scopus 로고
    • Snapback: A stable regenerative breakdown mode of MOS devices
    • Dec.
    • A. Ochoa et al., "Snapback: A stable regenerative breakdown mode of MOS devices," IEEE Trans. Nucl. Sci., vol. NS-30, no. 6, pp. 4127-4130, Dec. 1983.
    • (1983) IEEE Trans. Nucl. Sci. , vol.6 NS-30 , pp. 4127-4130
    • Ochoa, A.1
  • 13
    • 0024890333 scopus 로고
    • Heavy ion induced snapback in CMOS devices
    • Dec.
    • R. Koga and W. A. K. Kolasinski, "Heavy ion induced snapback in CMOS devices," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 2367-2374, Dec. 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.36 , Issue.6 , pp. 2367-2374
    • Koga, R.1    Kolasinski, W.A.K.2
  • 14
    • 11044238764 scopus 로고    scopus 로고
    • Single event effects results for candidate spacecraft electronics for NASA
    • M. V. O'Bryan et al., "Single event effects results for candidate spacecraft electronics for NASA," in IEEE Radiation Effects Data Workshop Record, 2003, pp. 65-76.
    • (2003) IEEE Radiation Effects Data Workshop Record , pp. 65-76
    • O'Bryan, M.V.1
  • 15
    • 0035166716 scopus 로고    scopus 로고
    • Recent radiation damage and single event effect results for candidate spacecraft electronics
    • M. V. O'Bryan et al., "Recent radiation damage and single event effect results for candidate spacecraft electronics," in IEEE Radiation Effects Data Workshop Record, 2001, pp. 82-87.
    • (2001) IEEE Radiation Effects Data Workshop Record , pp. 82-87
    • O'Bryan, M.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.