Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 2, 2006, Pages 580-588

  Wang, Tao ^b   Chen, Hsiao Chin ^b   Chiu, Hung Wei ^c   Lin, Yo Sheng ^a,d   Huang, Guo Wei ^a,e   Lu, Shey Shi ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^e NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Complementary metal oxide semiconductor (CMOS); Inductively coupled plasma (ICP); Low noise amplifier (LNA); Voltage controlled oscillator (VCO)

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS); LOW-NOISE AMPLIFIER (LNA); VOLTAGE CONTROLLED OSCILLATORS (VCO);

AMPLIFIERS (ELECTRONIC); CHIP SCALE PACKAGES; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; OSCILLATORS (ELECTRONIC); SILICON;

CMOS INTEGRATED CIRCUITS;

EID: 33144464279     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.862715     Document Type: Article

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