The determination of S-Parameters from the poles of voltage-gain transfer function for RF IC design

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 52, Issue 1, 2005, Pages 191-199

  Lu, Shey Shi ^a   Lin, Yo Sheng ^b   Chiu, Hung Wei ^a   Chen, Yu Chang ^a   Meng, Chin Chun ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Broad band amplifier; Poles; S parameters; Transfer function

Indexed keywords

BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; FREQUENCY RESPONSE; INTEGRATED CIRCUIT LAYOUT; POLES AND ZEROS; SCATTERING PARAMETERS; TRANSFER FUNCTIONS;

REVERSE ISOLATION; VOLTAGE-GAIN TRANSFER FUNCTION;

PARAMETER ESTIMATION;

EID: 12944295085     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2004.840084     Document Type: Article

References (14)

1. A. S. Sedra and K. C. Smith, Microelectronic Circuits, 4th ed. New York: Oxford Univ. Press, 1998, p. 601.
2. A. B. Carlson, Circuits. Pacific Grove, CA: Brooks/Cole, 2000, pp. 162-169.
3. B. Razavi, Design of Analog CMOS Integrated Circuits. New York: McGraw-Hill, 2001, p. 166-195,246-285.
4. G. Gonzalez, Microwave Transistors and Amplifiers Analysis and Design 2nd ed. Englewood Cliffs, NJ: Prentice-Hall, 1984, p. 34.
5. G. Gonzalez, Microwave Transistors and Amplifiers Analysis and Design 2nd ed. Englewood Cliffs, NJ: Prentice-Hall, 1984, p. 62.
6. R. Goyal, "S-parameter output from the SPICE program," IEEE Circuits Devices Mag., vol. 4, no. 2, pp. 28-29, Mar. 1988.
7. R. G. Meyer and R. A. Blauschild, "A 4-terminal wide-band monolithic amplifier," IEEE J. Solid-State Circuits, vol. SC-16, no. 6, pp. 634-638, Dec. 1981.
8. I. Kipnis et al., "Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz," in Microw. Symp. Dig., IEEEMTT-S Int., vol. 1, June 1989, pp. 109-112.
9. K. W. Kobayashi and A. K. Oki, "A DC-10 GHz high gain-low noise GaAs HBT direct-coupled amplifier," IEEE Microw. Guided Wave Lett., vol. 5, no., pp. 308-310, Sep. 1995.
10. K. W. Kobayashi et al., "Low dc power high gain-bandwidth product In-A1As/InGaAs-InP HBT direct-coupled amplifiers," in Proc. IEEE GaAs IC Symp., Nov. 1996, pp. 141-144.
11. C. D. Hull and G. B. Meyer, "Principle of monolithic wideband feedback amplifier design," Int. J. High Speed Electron., vol. 3, pp. 53-93, Feb. 1992.
12. M. C. Chiang et al., "Analysis, design, and optimization of InGaP-GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops," IEEE J. Solid-State Circuits, vol. 37, no. 6, pp. 694-701, Jun. 2002.
13. S. S. Lu et al., "A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design," IEEE Trans. Microw. Theory Tech., vol. 49, no. 2, pp. 406-409, Feb. 2001.
14. F. T. Chien and Y. J. Chan, "Bandwidth enhancement of transimpedance amplifier by capacitive-peaking design," IEEE J. Solid-State Circuits, vol. 34, no. 8, pp. 1167-1170, Aug. 1999.