Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2421-2425

  McMorrow, Dale ^a   Lotshaw, William T ^a,b   Melinger, Joseph S ^a   Buchner, Stephen ^c   Davis, John D ^d   Lawrence, Reed K ^d   Bowman, James H ^d   Brown, Ron D ^d   Carlton, Dave ^d   Pena, Joseph ^d   Vasquez, Juan ^d   Haddad, Nadim ^d   Warren, Kevin ^e   Massengill, Lloyd ^e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b AEROSPACE CORPORATION   (United States)

^c QSS GROUP INC   (United States)

^d BAE SYSTEMS   (United States)

^e VANDERBILT UNIVERSITY   (United States)

Author keywords

Laser SEE; Nonlinear absorption; SEE; SEU; Silicon; Single event effects; SRAM

Indexed keywords

FLIP CHIP DEVICES; LIGHT ABSORPTION; PHOTONS; RADIATION HARDENING; SILICON WAFERS;

LASER SEE; NONLINEAR ABSORPTION; SEE; SEU; SINGLE-EVENT EFFECTS;

STATIC RANDOM ACCESS STORAGE;

EID: 33144459434     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860673     Document Type: Conference Paper

References (21)

1. D. McMorrow, W. T. Lotshaw, J. S. Melinger, S. Buchner, and R. L. Pease, "Sub-bandgap laser-induced single event effects: Carrier generation via two-photon absorption," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3002-3008, Dec. 2002.
2. D. McMorrow, W. T. Lotshaw, J. S. Melinger, S. Buchner, Y. Boulghas-soul, L. W. Massengill, and R. Pease, "Three dimensional mapping of single-event effects using two-photon absorption," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2199-2207, Dec. 2003.
3. D. McMorrow, S. Buchner, W. T. Lotshaw, J. S. Melinger, M. Maher, and M. W. Savage, "Demonstration of through-wafer, two-photon-in-duced single-event effects," IEEE Trans. Nucl, Sci., vol. 501, no. 6, pp. 3553-3557, Dec. 2004.
4. M. Goppert-Mayer, "Ueber elementarakte mit zwei quantenspraengen," Ann. Phys., vol. 9, pp. 273-294, 1931.
5. E. W. Van Stryland, H. Vanherzeele, M. A. Woodall, M. J. Soileau, A. L. Smirl, S. Guha, and T. F. Boggess, "Two photon absorption, non-linear refraction, and optical limiting," Opt. Eng., vol. 24, pp. 613-623, Jul./Aug. 1985.
6. T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, and A. L. Smirl, "Simutaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalling silicon," IEEE J. Quantum Electron., vol. QE-22, no. 2, pp. 360-368, Feb. 1986.
7. A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Young, and E. W. Van Stryland, "Determination of bound electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, ZnTe," J. Opt. Soc. Amer. B, vol. 9, pp. 405-414, Mar. 1992.
8. J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weather-ford, and A. B. Campbell, "Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2574-2584, Dec. 1994.
9. S. C. Moss, S. D. LaLumondiere, J. R. Scarpulla, K. P. MacWilliams, W. R. Crain, and R. Koga, "Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 1948-1955, Dec. 1995.
10. D. McMorrow, J. S. Melinger, S. Buchner, T. Scott, R. D. Brown, and N. F. Haddad, "Application of a pulsed laser for evaluation and optimization of SEU-hard designs," IEEE Trans. Nucl. Sci., vol. 47, no. 3, pp. 559-565, Jun. 2000.
11. S. Buchner, D. McMorrow, C. Poivey, J. Howard, R. L. Pease, M. Savage, L. Massengill, and Y. Boulghassoul, "Comparison of single-event transients induced in an operational amplifier (LM124) by pulsed laser light and a broad beam of heavy ions," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2776-2781, Oct. 2004.
12. V. Pouget, D. Lewis, and P. Fouillat, "Time-resolved scanning of integrated circuits with a pulsed laser: Application to transient fault injection in an ADC," IEEE Trans. Instrum. Meas., vol. 53, no. 4, pp. 1227-1231, Aug. 2004.
13. G. G. Macfarlane, T. P. McLean, J. E. Quarington, and V. Roberts, "Excitation and phonon effects in the absorption spectra of germanium and silicon," J. Phys. Chem. Solids, vol. 8, pp. 388-392, 1959.
14. P. E. Schmid, "Optical absorption in heavily doped silicon," Phys. Rev. B, vol. 23, pp. 5531-5536, May 1981.
15. B. Li, L. L. Zien, D. C. Lawson, T. B. Butts, and T. M. Hoang, "Self-restoring single event upset (SEU) hardened multiport memory cell," U.S. patent 6,215,694, Apr. 10, 2001.
16. K. Warren, R. A. Weller, M. Mendenhall, R. Reed, D. Ball, C. Howe, B. Olson, M. Alles, L. W. Massengut, R. Schrimpf, N. Haddad, S. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The contributions of nuclear reactions to single event upset cross-section measurements in a high-density SEU hardened SRAM technology," IEEE Trans. Nucl. Sci., vol. 52, no. 6, Dec. 2005.
17. B. D. Olson, D. R. Ball, K. M. Warren, L. W. Masengill, N. Haddad, and D. McMcMorrow, "Simultaneous SE charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design," IEEE Trans. Nucl. Sci., vol. 52, no. 6, Dec. 2005.
18. R. Ecoffet, S. Duzellier, D. Falguere, L. Guibert, and C. Inguimbert, "Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs]," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2230-2236, Dec. 1997.
19. R. Koga, S. H. Grain, W. R. Crain, K. B. Crawford, and S. J. Hansel, "Comparative SEU sensitivities to relativistic heavy ions," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2475-2482, Dec. 1998.
20. N. G. Nilsson and K. G. Svantesson, "The role of free carrier absorption in laser annealing of silicon at 1.06 μm," J. Phys. D: Appl. Phys., vol. 13, pp. 39-44, 1980.
21. W. T. Lotshaw, D. McMorrow, and J. S. Melinger, unpublished work.