Demonstration of single-event effects induced by through-wafer two-photon absorption

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3553-3557

  McMorrow, Dale ^a   Buchner, Stephen ^b   Lotshaw, William T ^c   Melinger, Joseph S ^a   Maher, Mike ^d   Savage, Mark W ^e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b QSS GROUP INC   (United States)

^c National Semiconductor Corp ^*  (United States)

^d NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^e NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

LM124 operational amplifier; Multiphoton absorption; Nonlinear absorption; Nonlinear optical carrier injection; Single event effects (SEE); Single event transients (SET)

Indexed keywords

ABSORPTION; ELECTRON MULTIPLIERS; HEAVY IONS; IRRADIATION; LIGHT AMPLIFIERS; METALLIZING; OPERATIONAL AMPLIFIERS;

LM124 OPERATIONAL AMPLIFIER; MULTIPHOTON ABSORPTION; NONLINEAR ABSORPTION; NONLINEAR-OPTICAL CARRIER INJECTION; SINGLE-EVENT EFFECTS (SEE); SINGLE-EVENT TRANSIENTS (SET);

PHOTONS;

EID: 11044236559     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839106     Document Type: Conference Paper

References (9)

1. D. McMorrow, W. T. Lotshaw, J. S. Melinger, S. Buchner, and R. L. Pease, "Sub-bandgap laser-induced single event effects: Carrier ganeration via two-photon absorption," IEEE Trans. Nucl. Sci., vol. 49, pp. 3002-3008, Dec. 2002.
2. D. McMorrow, W. T. Lotshaw, J. S. Melinger, S. Buchner, Y. Boulghassoul, L. W. Massengill, and R. Pease, "Three dimensional mapping of single-event effects using two-photon absorption," IEEE Trans. Nucl. Sci., vol. 50, pp. 2199-2207, Dec. 2003.
3. M. Goppert-Mayer, "Ueber elementarakte mi t zwei quantenspruengen," Ann. Phys. (Germany), vol. 9, pp. 273-294, 1931.
4. E. W. Van Stryland, H. Vanherzeele, M. A. Woodall, M. J. Soileau, A. L. Smirl, S. Guha, and T. F. Boggess, "Two photon absorption, non-linear refraction and optical limiting," Opt. Eng., vol. 24, pp. 613-623, July/Aug. 1985.
5. T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, and A. L. Smirl, "Simutaneous Measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalling silicon," IEEE J. Quantum Electron., vol. 22, pp. 360-368, Feb. 1986.
6. D. Lewis, V. Pouget, F. Beaudoin, P. Perdu, H. Lapuyade, P. Fouillat, and A. Touboul, "Backside laser testing of IC's for SET sensitivity evaluation," IEEE Trans. Nucl. Sci., vol. 48, pp. 2193-2201, Dec. 2001.
7. F. Miller, A. Germain, N. Buard, R. Gaillard, P. Poirot, C. Chatry, T. Carriere, and R. Dufayel, "Interest of laser test facility fo the assessment of natural radiation environment effects on integrated circuits based systems," presented at the 7th Eur. Conf. on Radiation and Its Effects on Components and Systems (RADECS 2003), Noodwijk, The Netherlands, Sept. 15-19, 2003.
8. A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Young, and E. W. Van Stryland, "Determination of bound electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, ZnTe," J. Opt. Soc. Amer. B, vol. 9, pp. 405-414, Mar. 1992.
9. J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weather-ford, and A. B. Campbell, "Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies," IEEE Trans. Nucl. Sci., vol. 41, pp. 2574-2584, Dec. 1994.