Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 1 A/B, 2004, Pages

  Kim, Jong Su ^a   Kawabe, Mitsuo ^a   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Atomic hydrogen etching cleaning; GaAs quantum wells (QWs); InAs quantum dots (QDs); Molecular beam epitaxy (MBE); Photoluminescence (PL); Regrowth

Indexed keywords

CLEANING; DEGRADATION; ETCHING; HIGH ENERGY ELECTRON DIFFRACTION; HYDROGEN; INTERFACES (MATERIALS); OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ATOMIC HYDROGEN ETCHING/CLEANING; GAAS QUANTUM WELLS (QW); INAS QUANTUM DOTS (QD); REGROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1842708955     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L103     Document Type: Article

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