Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Ishikawa, Yasuhiko ^a,b   Yamamoto, Chihiro ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON-ON-INSULATOR (SOI) LAYERS; SINGLE-ELECTRON TUNNELING; STRAIN SOURCES;

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); OSCILLATIONS; SILICON WAFERS; STRAIN;

SILICON ON INSULATOR TECHNOLOGY;

EID: 32944471838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2176849     Document Type: Article

References (13)

1. Y. Ishikawa, K. Yamauchi, C. Yamamoto, and M. Tabe, Mater. Res. Soc. Symp. Proc. 864, E6.5.1 (2005).
2. K. Rousseau, J. L. Rouviere, F. Fournel, and H. Moriceau, Appl. Phys. Lett. 80, 4121 (2002), and references therein.
3. R. A. Wind, M. J. Murtagh, F. Mei, Y. Wang, M. A. Hines, and S. L. Sass, Appl. Phys. Lett. 78, 2205 (2001).
4. F. E. Ejeckam, Y. H. Lo, S. Subramanian, H. Q. Hou, and B. E. Hammons, Appl. Phys. Lett. 70, 1685 (1997).
5. D. Hull and D. J. Bacon, Introduction to Dislocations, 4th ed. (Butterworth-Heinemann, Oxford, UK, 2001), Chap..
6. J. P. Hirth and J. Lothe, Theory of Dislocations, 2nd ed. (Wiley, New York, 1982), Chap..
7. F. Leroy, J. Eymery, P. Gentile, and F. Fournel, Appl. Phys. Lett. 80, 3078 (2002).
8. F. Leroy, J. Eymery, P. Gentile, and F. Fournel, Surf. Sci. 545, 211 (2003).
9. A. Bourret, Surf. Sci. 432, 37 (1999).
10. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
11. K. Shiraishi, M. Nagase, S. Horiguchi, H. Kageshima, M. Uematsu, Y. Takahashi, and K. Murase, Physica E (Amsterdam) 7, 337 (2000).
12. Y. Ishikawa, S. Makita, J. Zhang, T. Tsuchiya, and M. Tabe, Jpn. J. Appl. Phys., Part 2 38, L789 (1999).
13. See, for example, F. R. Waugh, M. J. Berry, C. H. Crouch, C. Livermore, D. J. Mar, R. M. Westervelt, K. L. Campman, and A. C. Gossard, Phys. Rev. B 53, 1413 (1996).