X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Journal of Physics D: Applied Physics

Volumn 38, Issue 10 A, 2005, Pages

  Kyutt, R N ^a   Shulpina, I L ^a   Mosina, G N ^a   Ratnikov, V V ^a   Sorokin, L M ^a   Scheglov, M P ^a   Ruvimov, S S ^b   Kearns, J ^b   Todt, V ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b MITSUBISHI CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CRYSTAL DEFECTS; DECOMPOSITION; DOPING (ADDITIVES); SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BORRMANN EFFECT INTENSITY; CRYSTAL RADIUS; GROWTH AXIS; PHOTOELECTRIC ABSORPTION;

CRYSTAL GROWTH FROM MELT;

EID: 18744382424     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/10A/021     Document Type: Article

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