Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 351, Issue 4-5, 2006, Pages 302-307

  Song, Y P ^a   Wang, P W ^a   Zhang, X H ^a   Xu, J ^a   Li, G H ^b   Yu, D P ^a  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Cathodolumonesence; Diluted magnetic semiconductor nanowire; Photoluminescence

Indexed keywords

AMMONIA; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MAGNETIC VARIABLES MEASUREMENT; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

CATHODOLUMONESENCE; FERROMAGNETIC ORDERINGS; GALLIUM OXIDE NANOWIRES; LARGE SCALE PRODUCTIONS; MICROSTRUCTURE ANALYSIS; NITROGEN CONCENTRATIONS; PHOTOLUMINESCENCE MEASUREMENTS; TEMPERATURE RANGE;

MAGNETISM;

EID: 32544454997     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2005.11.006     Document Type: Article

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