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MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire

(9) Salviati, Giancarlo a Armani, Nicola a Zanotti Fregonara, Carlo a Gombia, Enos a Albrecht, Martin b Strunk, Horst P b Mayer, Markus c Kamp, Markus c Gasparotto, Andrea d

a CNR (Italy)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

c UNIVERSITY OF ULM (Germany)

d UNIVERSITY OF PADOVA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COMPLEXATION; LUMINESCENCE; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CONDUCTION BAND (CB); VALENCE BAND (VB); YELLOW LUMINESCENCE (YL);

GALLIUM NITRIDE;

EID: 3242786435 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300005032 Document Type: Conference Paper

Times cited : (11)

References (23)

1
- 0019284819
- T.Ogino and M.Aoki, Jpn J. Appl. Phys.19, 2395-2405 (1980)
- (1980) Jpn J. Appl. Phys. , vol.19 , pp. 2395-2405
- Ogino, T.¹ Aoki, M.²

2
- 33751345775
- D.M. Hofmann, D. Kovalev, G. Steude, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprom, H. Amano and I. Akasaki, Phys. Rev. B52 16702-16706 (1995)
- (1995) Phys. Rev. , vol.B52 , pp. 16702-16706
- Hofmann, D.M.¹ Kovalev, D.² Steude, G.³ Meyer, B.K.⁴ Hoffmann, A.⁵ Eckey, L.⁶ Heitz, R.⁷ Detchprom, T.⁸ Amano, H.⁹ Akasaki, I.¹⁰

3
- 85010812746
- J.Neugebauer and C.G.Van de Walle, Appl. Phys. Lett. 69, 503-505 (1996)
- (1996) Appl. Phys. Lett. , vol.69 , pp. 503-505
- Neugebauer, J.¹ Van De Walle, C.G.²

4
- 0032094135
- C.G.Van de Walle, C.Stampfl, J.Neugebauer, J. Cryst. Growth 189-190, 505-510 (1998)
- (1998) J. Cryst. Growth , vol.189-190 , pp. 505-510
- Van De Walle, C.G.¹ Stampfl, C.² Neugebauer, J.³

5
- 0001430225
- W.Kim, A.Salvador, A.E.Botchkarev, O.Aktas, S.N.Mohammad and H.Morkoç, Appl. Phys. Lett. 69, 559-561 (1996)
- (1996) Appl. Phys. Lett. , vol.69 , pp. 559-561
- Kim, W.¹ Salvador, A.² Botchkarev, A.E.³ Aktas, O.⁴ Mohammad, S.N.⁵ Morkoç, H.⁶

6
- 3442896012
- U.Kaufmann, M.Kunzer, M.Maier, H.Obloh, A.Ramakrishnan, B.Santic and P.Schlotter, Appl. Phys. Lett., 72, 1326-1328 (1998)
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1326-1328
- Kaufmann, U.¹ Kunzer, M.² Maier, M.³ Obloh, H.⁴ Ramakrishnan, A.⁵ Santic, B.⁶ Schlotter, P.⁷

7
- 0026819254
- S.Nakamura, T.Mukai, M.Senoh and N.Iwasa, Jpn. J. Appl. Phys. 31, L139-141 (1992)
- (1992) Jpn. J. Appl. Phys. , vol.31
- Nakamura, S.¹ Mukai, T.² Senoh, M.³ Iwasa, N.⁴

8
- 0002021102
- F.J.Sanchez, F.Calle, D.Basak, J.M.G.Tijero, M.A.Sanchez-Garcia, E.Monroy, E.Calleja, E.Muñoz, B.Beaumont, P.Gibart, J.J.Serrano and J.M.Blanco, MRS Internet J. Nitride Semicond. Res. 2, 28 (1997)
- (1997) MRS Internet J. Nitride Semicond. Res. , vol.2 , pp. 28
- Sanchez, F.J.¹ Calle, F.² Basak, D.³ Tijero, J.M.G.⁴ Sanchez-Garcia, M.A.⁵ Monroy, E.⁶ Calleja, E.⁷ Muñoz, E.⁸ Beaumont, B.⁹ Gibart, P.¹⁰ Serrano, J.J.¹¹ Blanco, J.M.¹²

9
- 0002041335
- M.Kamp, M.Mayer, A.Pelzmann and K.J.Ebeling, MRS Internet J. Nitride Semicond. Res. 2, 26 (1997)
- (1997) MRS Internet J. Nitride Semicond. Res. , vol.2 , pp. 26
- Kamp, M.¹ Mayer, M.² Pelzmann, A.³ Ebeling, K.J.⁴

10
- 0032620905
- M.Leroux, N.Grandjean, B.Beaumont, G.Nataf, F.Semond, J.Massies and P.Gibart, J. Appl. Phys. 86, 3721-3728 (1999)
- (1999) J. Appl. Phys. , vol.86 , pp. 3721-3728
- Leroux, M.¹ Grandjean, N.² Beaumont, B.³ Nataf, G.⁴ Semond, F.⁵ Massies, J.⁶ Gibart, P.⁷

11
- 0032598217
- P.H.Lim, B.Schineller, O.Schon, K.Heime and M.Heuken, J. Cryst. Growth 205, 1-10 (1999)
- (1999) J. Cryst. Growth , vol.205 , pp. 1-10
- Lim, P.H.¹ Schineller, B.² Schon, O.³ Heime, K.⁴ Heuken, M.⁵

12
- 0001024075
- Reboredo e Pantelides Phys.Rev. Lett. 82, 1887 (1999)
- (1999) Phys.Rev. Lett. , vol.82 , pp. 1887
- Reboredo¹ Pantelides²

13
- 0033077033
- Lee e Chang, Semic. Sci. and Technol. 14, 138 (1999)
- (1999) Semic. Sci. and Technol. , vol.14 , pp. 138
- Lee¹ Chang²

14
- 0001841410
- E. Oh, H.S. Park and Y.J. Park, Appl. Phys. Lett. 72, 70-72 (1998)
- (1998) Appl. Phys. Lett. , vol.72 , pp. 70-72
- Oh, E.¹ Park, H.S.² Park, Y.J.³

15
- 21544462922
- L.Pavesi and M.Guzzi, J. Appl. Phys. 75, 4779-4842 (1994)
- (1994) J. Appl. Phys. , vol.75 , pp. 4779-4842
- Pavesi, L.¹ Guzzi, M.²

16
- 0020019351
- P.J. Dean, Prog. Cryst. Growth, Charact. 1982, vol. 5 pagg. 89-174
- (1982) Prog. Cryst. Growth, Charact. , vol.5 , pp. 89-174
- Dean, P.J.¹

17
- 0001251320
- C.Bungaro, K.Rapcewiz and J.Bernholc, Phys. Rev. B59, 9771-9774 (1999)
- (1999) Phys. Rev. , vol.B59 , pp. 9771-9774
- Bungaro, C.¹ Rapcewiz, K.² Bernholc, J.³

18
- 0027577961
- T.L.Tansley and R.J.Egan, Physica B 185, 190-193 (1993)
- (1993) Physica B , vol.185 , pp. 190-193
- Tansley, T.L.¹ Egan, R.J.²

19
- 0029640326
- T.Suski, P.Perlin, H.Teisseyre, M.Leszczynski, I.Grzegory, J.Jun and M.Bockowski, Appl. Phys. Lett. 67, 2188-2190 (1995)
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2188-2190
- Suski, T.¹ Perlin, P.² Teisseyre, H.³ Leszczynski, M.⁴ Grzegory, I.⁵ Jun, J.⁶ Bockowski, M.⁷

20
- 5644231961
- J.Neugebauer and C.G.Van de Walle, Phys. Rev. B50 Rapid Comm., 8067-8070 (1994)
- (1994) Phys. Rev. B50 Rapid Comm. , vol.B50 , pp. 8067-8070
- Neugebauer, J.¹ Van De Walle, C.G.²

21
- 23544457369
- E.E.Reuter, R.Zhang, T.F.Kuech and S.G.Bishop, MRS Internet J. Nitride Semicond. Res. 4S1 G3.67 (1999)
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.4 S1
- Reuter, E.E.¹ Zhang, R.² Kuech, T.F.³ Bishop, S.G.⁴

22
- 0001799977
- D.J.
- P. Boguslawski, E.L. Briggs and J. Bernholc, Appl. Phys. Lett. 69, 233-235 (1996)D.J.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 233-235
- Boguslawski, P.¹ Briggs, E.L.² Bernholc, J.³

23
- 0001383534
- D.J. Chadi, Appl. Phys. Lett. 71, 2970-2971 (1997)
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2970-2971
- Chadi, D.J.¹

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