Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1455-1459

  Krishnaswami, K ^a   Vangala, S R ^a   Zhu, B ^a   Goodhue, W D ^a   Allen, L P ^b,g   Santeufemio, C ^b   Liu, X ^c   Ospina, M C ^c   Whitten, J ^c   Sung, C ^c   Dauplaise, H ^d   Bliss, D ^d   Dallas, G ^e   Bakken, D ^e   Jones, K S ^f  

^a University of Massachusetts Lowell   (United States)

^b Epion Corporation   (United States)

^c UNIVERSITY OF MASSACHUSETTS LOWELL   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e Galaxy Compound Semiconductors   (United States)

^f J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^g Galaxy Semiconductors   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BRAGG CELLS; CHEMICAL MECHANICAL POLISHING; ION BEAMS; MASKS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS;

CHEMICAL MECHANICAL POLISHING (CMP); GAS CLUSTER ION BEAMS (GCIB); LOW POWER ELECTRONICS; PENETRATION DEFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3242741135     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1714917     Document Type: Conference Paper

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