Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4576-4579

  Cheng, X C ^a   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004369589     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371405     Document Type: Article

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