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Volumn 22, Issue 3, 2004, Pages 1495-1498
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Similarities between Ga 0.48In 0.52N yP 1-y and Ga 0.92In 0.08N yAs 1-y grown on GaAs (001) substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDGAP ENERGY;
GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE);
PHILLIPS X-RAY DIFFRACTOMETER;
X-RAY ROCKING CURVE (XRC) MEASUREMENTS;
COMPUTER SIMULATION;
ELECTRON MOBILITY;
HETEROJUNCTION BIPOLAR TRANSISTORS;
MOLECULAR BEAM EPITAXY;
NITROGEN;
PHOTOLUMINESCENCE;
RAPID THERMAL ANNEALING;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTOR DOPING;
X RAY DIFFRACTION ANALYSIS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 3242733123
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (12)
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