Effect of annealing on the microstructure of ultrathin tungsten nitride diffusion barriers for copper metallization

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 269-277

  Hecker, M ^a   Hubner R ^a   Ecke, R ^b   Schulz, S ^b   Engelmann, H J ^c   Stegmann, H ^c   Hoffmann, V ^a   Mattern, N ^a   Gessner, T ^b   Zschech, E ^c  

^a IFW DRESDEN   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Copper metallization; Diffusion barriers; Tungsten nitride

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTALLIZATION; DIFFUSION; INTERFACES (MATERIALS); METALLIZING; MICROSTRUCTURE; PHASE COMPOSITION; TUNGSTEN COMPOUNDS;

DIFFUSION BARRIERS;

ULTRATHIN FILMS;

EID: 0036776407     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00799-2     Document Type: Conference Paper

References (7)