Temperature dependence of optical properties of Ga 0.3In 0.7N xAs 1-x quantum dots grown on GaAs (001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1515-1517

  Nishikawa, A ^a   Hong, Y G ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER-LAYER ENERGY LEVEL; FULL WIDTH AT HALF MAXIMUM (FWHM); GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE); THERMAL QUENCHING;

ACTIVATION ENERGY; CHEMICAL BEAM EPITAXY; GROUND STATE; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3242670738     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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