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Volumn 79, Issue 16, 2001, Pages 2564-2566

Abnormal temperature behavior of photoluminescence from self-assembled InAs/AlAs quantum dots

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[No Author keywords available]

Indexed keywords


EID: 0035886165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1410332     Document Type: Article
Times cited : (33)

References (17)
  • 15
    • 49949133713 scopus 로고
    • Amsterdam
    • Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967).
    • (1967) Physica , vol.34 , pp. 149
    • Varshni, Y.P.1
  • 17
    • 0039982923 scopus 로고    scopus 로고
    • note
    • We found that above 150 K there is a thermal coupling between ground states and first excited states. At higher temperatures, the shrinkage of the PL linewidth and the strong redshift of the PL peak energy with respect to the InAs band gap are explained by the carrier redistribution among QD states.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.