Electronic properties of semiconductor quantum dots for Coulomb blockade applications

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 496-500

  See J ^a   Dollfus, P ^a   Galdin, S ^a   Hesto, P ^a  

^a CNRS   (France)

Author keywords

Coulomb blockade; Nanocrystal; Single electron device

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; COULOMB BLOCKADE; ELECTRIC POTENTIAL; ELECTRON GAS; HAMILTONIANS; NANOSTRUCTURED MATERIALS; POISSON EQUATION;

CHARGE DENSITY; NANOCRYTALS; SINGLE ELECTRON DEVICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642390417     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.046     Document Type: Conference Paper

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