Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5957, Issue , 2005, Pages 1-9

  Piotrowski, A ^a   Gawron, W ^a,b   Klos K ^a   Pawluczyk, J ^a   Piotrowski, J ^a   Madejczyk, P ^b   Rogalski, A ^b  

^a VIGO SYSTEM S A   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Hg1 xCdxTe uncooled photodetectors; MOCVD growth

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); MERCURY COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING CADMIUM TELLURIDE;

HETEROJUNCTION PHOTODIODE; MOCVD GROWTH; MULTILAYER HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 32344432815     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.625631     Document Type: Conference Paper

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