MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3-1.6 μm avalanche photodetectors

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 488-492

  Wu, Owen K ^a   Rajavel, Rajesh D ^a   De Lyon, Terry J ^a   Jensen, John E ^a   Jack, Mike D ^b   Kosai, Ken ^b   Chapman, George R ^b   Sen, Sanghamitra ^b   Baumgratz, Bonnie A ^b   Walker, Bobby ^c   Johnson, Bill ^c  

^a Hughes Aircraft Co   (United States)

^b Santa Barbara Research Center   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

Author keywords

Avalanche photodetectors; HgCdTe; Molecular beam epitaxy (MBE)

Indexed keywords

EID: 0038668534     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0182-9     Document Type: Article

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