MOCVD HgCdTe heterostructures for uncooled infrared photodetectors

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5732, Issue , 2005, Pages 273-284

  Piotrowski, A ^a   Madejczyk, P ^b   Gawron, W ^b   Klos K ^a   Pawluczyk, J ^a   Grudzien M ^a   Piotrowski, J ^a   Rogalski, A ^b  

^a VIGO SYSTEM S A   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

HgCdTe ternary alloy; MOCVD growth; Room temperature infrared photodetectors

Indexed keywords

COST EFFECTIVENESS; INFRARED DETECTORS; MERCURY COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOELECTROMAGNETIC EFFECTS; PHOTOVOLTAIC CELLS; SEMICONDUCTING CADMIUM TELLURIDE; SPURIOUS SIGNAL NOISE; STOICHIOMETRY;

HGCDTE TERNARY ALLOY; MOCVD GROWTH; MULTIJUNCTION PHOTOVOLTAIC DEVICES; ROOM TEMPERATURE INFRARED PHOTODETECTORS;

HETEROJUNCTIONS;

EID: 21844456020     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.593337     Document Type: Conference Paper

References (23)

1. J. Piotrowski, W. Galus and M. Grudzień, "Near room-temperature IR photodetectors," Infrared Phys. 31, 1-48 (1990).
2. J. Piotrowski, "Uncooled operation of IR photodetectors," Opto-Electron. Rev. 12, 111-122 (2004).
3. J. Piotrowski and A. Rogalski, "Uncooled long wavelength infrared photon detectors,"Infrared Phys. Technol. 46, 115-131 (2004).
4. K. Adamiec, M. Grudzień, Z. Nowak, J. Pawluczyk, J. Piotrowski, J. Antoszewski, J. Dell, C. Musca, L. Faraone, "Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors", Proc. SPIE 2999, 34-43 (1997).
5. P. Norton, "HgCdTe infrared detectors," Opto-Electron. Rev. 10, 159-174 (2002).
6. L. Colombo, R.R. Chang, C.J. Chang, and B.A. Baird, "Growth of Hg-based alloys by the travelling heater method," J. Vac. Sci. Technol. A6, 2795-2799 (1988).
7. S.J.C. Irvine, "Metal-organic vapour phase epitaxy," Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, pp. 71-96, edited by P. Capper, Chapman @ Hall, London, 1997.
8. O.K. Wu, T.J. deLyon, R.D. Rajavel, and J.E. Jensen, "Molecular beam epitaxy of HgCdTe," inNarrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, pp. 97-130, edited by P. Capper, Chapman @ Hall, London, 1997.
9. Epichem data sheets.
10. W.E. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M. B. Reine, R. P. Ruth "Key issues in HgCdTe-based focal plane arrays: An industry perspective" J. Vac. Sci. Technol. 10, 1359-1369(1992).
11. L.M. Smith and J. Thompson, "Metal organic chemical vapor deposition (MOCVD) of cadmium telluride, mercury telluride and cadmium mercury telluride", Chemtronics 4, 60 (1989).
12. S.A. Svoronos, W.W Woo, S.J.C. Irvine, H.O. Sankur, and J. Bajaj, "A model of the interdiffused multilayer process", J. Electron. Mater. 25, 1561-1571 (1996).
13. C. Theodoropoulos, N.K. Ingle, and T.J. Mountziaris: "Computational studies of the transient behavior of horizontal MOVPE reactors" J. Cryst. Growth 170, 72-76 (1997).
14. xTe alloys," J. Vac. Sci. Technol. B9, 1716-1723 (1991).
15. L. Svob, I. Cheye, A. Lusson, D. Ballutaud, J.F. Rommeluere, Y. Marfaing, "Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation", Journal of Crystal Growth 184/185, 459-464 (1998).
16. J. Piotrowski and A. Rogalski, "Photoelectromagnetic, magnetoconcentration and Dember infrared detectors" in Narrow-Gap II-VI Compounds and Electromagnetic Applications, pp. 506-525, edited by P. Capper, Chapman & Hall, London 1997.
17. J. Piotrowski, W. Gawron, and Z. Djuric, "New generation of near-room-temperature photodetectors," Opt. Eng. 33, 1413-1421 (1994).
18. J. Piotrowski and W. Gawron, "Extension of longwavelength IR photovoltaic detector operation to near room-temperatures," Infrared Phys. Technol. 36, 1045-1051 (1995).
19. C. Musca, J. Antoszewski, J. Dell, L. Faraone, J. Piotrowski, and Z. Nowak, "Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperature," J. Electron. Mater. 27, 740-746 (1998).
20. J. Piotrowski, Z. Nowak, J. Antoszewski, C. Musca, J. Dell, and L. Faraone, "A novel multi-heterojunction HgCdTe long-wavelength infrared photovoltaic detector for operation under reduced cooling conditions," Semicond. Sci. Technol. 13, 1209-1214 (1998).
21. W. Gawron and A. Rogalski, "HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy." Infrared Phys. Technol. 43, 157-163 (2002).
22. xTe LWIR detectors," Proc. SPIE 4130, 175-184 (2000).
23. J. Piotrowski, P. Brzozowski, and K. Jóźwikowski, "Stacked multijunction photodetectors of long wavelength radiation," J. Electron. Mater. 32, 672-676 (2003).