TEM studies of stress relaxation in GaAsN and GaP thin films

Philosophical Magazine

Volumn 85, Issue 26-27 SPEC. ISS., 2005, Pages 3073-3090

  Li, Y ^a   Weatherly, G C ^a   Niewczas, M ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; STRESS RELAXATION; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

PERFECT DISLOCATION; ROUGH SURFACE RELAXATION;

THIN FILMS;

EID: 32144463022     PISSN: 14786435     EISSN: 14606992     Source Type: Journal    
DOI: 10.1080/14786430500154612     Document Type: Conference Paper

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