Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Journal of Electronic Materials

Volumn 30, Issue 7, 2001, Pages 900-906

  Ok, Young Woo ^a   Choi, Chel Jong ^a   Seong, Tae Yeon ^a   Uesugi, K ^b   Suemune, I ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Atomic force microscopy (AFM); Doping; GaAsN; Metalorganic molecular beam epitaxy (MOMBE); Transmission electron microscopy (TEM)

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NICKEL; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

LATERAL COMPOSITION MODULATION; METALORGANIC MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035391649     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0079-y     Document Type: Article

References (13)