Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 913-916

  Jacobson, H ^a   Bergman, J P ^a   Hallin, C ^a   Tuomi, T ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AALTO UNIVERSITY   (Finland)

Author keywords

4H SiC; Degradation; Diode; Stacking Fault; Synchrotron Topography

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GRAIN BOUNDARIES; INTERFACES (MATERIALS); SILICON CARBIDE; STACKING FAULTS; SURFACE TOPOGRAPHY; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAYS;

SYNCHROTRON TOPOGRAPHY;

SEMICONDUCTOR DIODES;

EID: 18744436889     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Iwata, U. Lindefelt, S. Öberg and P.R. Briddon, Phys. Rev. B65, (2001) p.033203
2. P. O. Å. Persson, L. Hultman, H. Jacobson, J. P. Bergman, E. Janzén, J. M. Molina-Aldareguia, W. J. Clegg, and T. Tuomi, Appl. Phys. Lett. 80 (2002) p.4852
3. J.Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, H. Lendenmann, Appl. Phys. Lett. 80 (2002) p.749
4. H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J. P. Bergman, A. Ellison, T. Tuomi, and E. Janzén, J. Appl. Phys. 91 (2002) p.6354