Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (1120) Face

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 925-928

  Kojima, K ^a   Ohno, T ^a   Fujimoto, T ^a   Katsuno, M ^a   Ohtani, N ^a   Nishio, J ^a   Ishida, Y ^a   Takahashi, T ^a   Suzuki, T ^a   Tanaka, T ^a   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

(1120) Face; 4H SiC; Reverse Characteristics; Schottky Barrier DiodeStacking Fault

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ETCHING; HYDROGEN; LEAKAGE CURRENTS; POTASSIUM COMPOUNDS; SILICON CARBIDE; STACKING FAULTS; SUBLIMATION; SUBSTRATES;

EPILAYERS;

SCHOTTKY BARRIER DIODES;

EID: 0242664908     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.925     Document Type: Conference Paper

References (6)

1. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: IEEE Electron Device Lett. 20 (1999), p. 611
2. J. Senzaki, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki and K. Fukuda: IEEE Electron Device Lett. 23 (2002), p. 13
3. J. Takahashi, N. Ohtani, M Katsuno and S. Shinoyama: Mater. Sci. Forum 264-268 (1998), p. 25
4. K. Kojima, T. Ohno, J. Senzaki, K. Fukuda, T. Fujimoto, M. Katsuno, N. Ohtani, J. Nishio, K. Masahara, Y. Ishida, T. Takahashi, T. Suzuki, T. Tamaka, S. Yoshida and K. Arai: Mater. Sci. Forum 389-393 (2002), p. 195
5. J. P. Bergman, H. Lendenmann, P. A. Nilsson, U. Lindefelt and P. Skytt: Mater. Sci. Forum 353-356 (2001), p. 299
6. K. Arai, in this conference.