Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 831-834

  Hatakeyama, Tetsuo ^a,b   Kushibe, Mitsuhiro ^a,b   Watanabe, Takatoshi ^a,b   Imai, Seiji ^a,b   Shinohe, Takashi ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b Tsukuba Central 2   (Japan)

Author keywords

Schottky Barrier Diode; Silicon Carbide; Thermionic Field Emission; Tunneling Current

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

TUNNELING CURRENT;

SILICON CARBIDE;

EID: 0242496503     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.831     Document Type: Conference Paper

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