Defect-Free AFM Scratching at the Si/SiO2 Interface Used for Selective Electrodeposition of Nanowires

Electrochemical and Solid-State Letters

Volumn 7, Issue 3, 2004, Pages

  Michler, J ^a   Gassilloud, R ^a,b   Gasser, Ph ^a   Santinacci, L ^b,c   Schmuki, P ^b  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; ATOMIC FORCE MICROSCOPY; COPPER; DEFECTS; DEFORMATION; DIAMONDS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PALLADIUM; WATER;

NANOSCRATCHES; STRUCTURAL DEFORMATIONS;

ELECTRODEPOSITION;

EID: 1542397225     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1643791     Document Type: Article

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