InP etching by Hl/Xe inductively coupled plasma for photonic-crystal device fabrication

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 1-3, 2006, Pages

  Ide, Toshihide ^a   Hashimoto, Jun Ichi ^a   Nozaki, Kengo ^a   Mizuta, Eiichi ^a   Baba, Toshihiko ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Dry etching; HI; ICP; InP; Nanolaser; Photonic crystal

Indexed keywords

ASPECT RATIO; CRYSTALS; ELECTRON BEAMS; FABRICATION; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING INDIUM PHOSPHIDE;

GAS PRESSURES; HI; NANOLASERS; PHOTONIC CRYSTALS;

DRY ETCHING;

EID: 31944452773     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L102     Document Type: Article

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