Fabrication of indium phosphide compound photonic crystal by hydrogen iodide/xenon inductively coupled plasma etching

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 11 A, 2004, Pages

  Fujitai, Masayuki ^a   Sugitatsu, Atsushi ^a,b   Uesugi, Toshitsugu ^a   Noda, Susumu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Dry etching; GalnAsP; Hydrogen iodide (HI); Indium phosphide (InP); Inductively coupled plasma (ICP); Microfabrication; Photonic crystal

Indexed keywords

CRYSTALS; DEFORMATION; DRY ETCHING; ELECTRON BEAMS; ETCHING; INDUCTIVELY COUPLED PLASMA; PHOTONS; XENON;

HYDROGEN IODIDE (HI); PHOTONIC CRYSTALS; RADIAL EFFECTS;

INDIUM COMPOUNDS;

EID: 11144275804     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1400     Document Type: Article

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