Step-shaped bismuth nanowires with metal-semiconductor junction characteristics

Nanotechnology

Volumn 17, Issue 4, 2006, Pages 1041-1045

  Tian, Y T ^a   Meng, G M ^a   Wang, G Z ^a   Phillipp, F ^b   Sun, S H ^a   Zhang, L D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; SEMICONDUCTOR METAL BOUNDARIES; SYNTHESIS (CHEMICAL);

ELECTROCHEMICAL DEPOSITION; EXTERNAL DOPING; SEMI-METALS; STEP-SHAPED BISMUTH NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 31944447719     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/4/033     Document Type: Article

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