Magnetoresistance of bismuth nanowire arrays: A possible transition from one-dimensional to three-dimensional localization

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 16, 1998, Pages R10091-R10095

  Heremans, J ^a   Thrush, C ^a   Zhang, Z ^b   Sun, X ^b  

^a GENERAL MOTORS CORPORATION   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001333339     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.R10091     Document Type: Article

References (12)

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12. The Bi nanowires in this study have an XRD pattern very similar to that of the nanowires grown by high-pressure liquid injection described in Z. Zhang, X. Sun, M. S. Dresselhaus, J. Y. Ying, and J. Heremans, Appl. Phys. Lett. 73, 1589(1998). This reference also contains a study of the resistance and magnetoresistance at temperatures above 4 K, where localization effects are negligible. For the purpose of the present study, this reference shows that Bi wires with diameters (Formula presented) nm may be viewed as a degenerately doped semiconductor.