Growth of pillarlike GaN nanostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 B, 2005, Pages 5664-5666

  Takeda, Satoshi ^a   Ishino, Kenei ^a   Inoue, Yoku ^a   Ishida, Akihiro ^a   Fujiyasu, Hiroshi ^a   Kominami, Hiroko ^a   Mimura, Hidenori ^a   Nakanishi, Yoichiro ^a   Sakakibara, Shingo ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b YAMAHA CORPORATION   (Japan)

Author keywords

GaN; Hot wall epitaxy; Nanostruotures

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH (MATERIALS); SCANNING ELECTRON MICROSCOPY;

HOT WALL EPITAXY; ISLAND BUFFER LAYERS; NANOPILLARS;

NANOSTRUCTURED MATERIALS;

EID: 31844451031     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5664     Document Type: Article

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