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Volumn , Issue , 1997, Pages 519-522
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Suppressed short-channel effects and improved stability in polysilicon thin film transistors with very thin ECR N2O-plasma gate oxide
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRICAL STRESS;
SHORT CHANNEL POLYSILICON THIN FILM TRANSISTORS;
ELECTRIC CURRENTS;
ELECTRON CYCLOTRON RESONANCE;
GATES (TRANSISTOR);
PLASMA APPLICATIONS;
POLYCRYSTALS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
STRESSES;
THIN FILM TRANSISTORS;
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EID: 84886447981
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (8)
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