Fabrication of HfC-coated Si field emitter arrays with built-in poly-si thin-film transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 B, 2005, Pages 5740-5743

  Nagao, Masayoshi ^a   Sacho, Yutaka ^a   Matsukawa, Takashi ^a   Kanemaru, Seigo ^a   Itoh, Junji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Field emission display; Field emitter array; Hafnium carbide; Polycrystalline silicon; Surface modification; Vacuum nanoelectronics

Indexed keywords

ARRAYS; COATINGS; FABRICATION; HAFNIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; POLYSILICON; SURFACE TREATMENT; VOLTAGE CONTROL;

EMISSION CONTROL; FIELD EMITTER ARRAYS; HAFNIUM CARBIDE; VACUUM NANOELECTRONICS;

FIELD EMISSION DISPLAYS;

EID: 31844442047     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5740     Document Type: Article

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