Fabrication of a new field emitter array with a built-in thin-film transistor on glass

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7134-7137

  Gamo, Hidenori ^b   Kanemaru, Seigo ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOPPAN PRINTING CO LTD   (Japan)

Author keywords

Amorphous silicon; Emission stability; Field emission display; Field emitter array; Thin film transistor

Indexed keywords

EID: 0343860373     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7134     Document Type: Article

References (9)

1. J. Itoh: Appl. Surf. Sci. 111 (1997) 194.
2. C. A. Spindt: J. Appl. Phys. 39 (1968) 3504.
3. S. Itoh, T. Niiyama, M. Taniguchi and T. Watanabe: J. Vac. Sci. Technol. B14 (1996) 1977.
4. J. Itoh, T. Hirano and S. Kanemaru: Appl. Phys. Lett. 69 (1996) 1577.
5. S. Kanemaru, K. Ozawa, K. Ehara, T. Hirano, H. Tanoue and J. Itoh: Jpn. J. Appl. Phys. 36 (1997) 7736.
6. H. Gamo, S. Kanemaru and J. Itoh: Appl. Phys. Lett. 73 (1998) 1301.
7. H. Gamo, S. Kanemaru and J. Itoh: IEEE Electron Device Lett. 10 (1996) 261.
8. J. Itoh, Y. Tohma, K. Morikawa, S. Kanemaru and J. Itoh: J. Vac. Sci. Technol. B13 (1995) 1968.
9. R. H. Fowler and L. Nordheim: Proc. R. Soc. London A119 (1928) 173.