Suicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs-part I: Mo suicide

IEEE Transactions on Electron Devices

Volumn 48, Issue 1, 2001, Pages 149-154

  Lee, Jong Duk ^a,b   Shim, Byung Chang ^a,b   Park, Byung Gook ^a,b  

^a Seoul National University ^*

^b Seoul National University   (South Korea)

Author keywords

Field emitter arrays; Molybdenum suicide

Indexed keywords

FIELD EMITTER ARRAY; MOLYBDENUM SILICIDE; SILICON FIELD EMITTER;

AMORPHOUS SILICON; ANNEALING; ANODES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON EMISSION; MOLYBDENUM; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS; SINGLE CRYSTALS;

ELECTRON DEVICES;

EID: 0035124679     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.892182     Document Type: Article

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