Thermal design considerations in the packaging of GaN based light emitting diods

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5941, Issue , 2005, Pages 1-14

  Christensen, Adam ^a   Nicol, David ^b   Ferguson, Ian ^b   Graham, Samuel ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Device reliability; Gallium nitride; Light emitting diode; Thermal conductivity

Indexed keywords

DEVICE RELIABILITY; MULTI-QUANTUM WELL (MQW); PEAK CONDUCTIVITY;

ELECTRONICS PACKAGING; GALLIUM NITRIDE; INFRARED IMAGING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; THERMAL CONDUCTIVITY; THERMOANALYSIS;

LIGHT EMITTING DIODES;

EID: 31844436685     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.625956     Document Type: Conference Paper

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