Computer model of the trapping media in micro FLASH® memory cells

Journal of Computer-Aided Materials Design

Volumn 9, Issue 1, 2002, Pages 21-32

  Fuks, David ^a   Kiv, Arnold ^a   Maximova, Tatiana ^a   Bibi, Rachel ^a   Roizin, Yakov ^b   Gutman, Micha ^b  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

Carriers migration; Computer model of dielectric; Coulomb correlation effects; Endurance retention prognosis; Limits for programming level; MicroFLASH memory cells; Molecular dynamics simulation; ONO structures; Parasitic trapping; Programming process; Silicon nitride; SONOS transistors; Thermalization of hot carriers; Trapping and scattering centers

Indexed keywords

CHARGE CARRIERS; DATA STORAGE EQUIPMENT; DIELECTRIC PROPERTIES OF SOLIDS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; TRANSISTORS;

CARRIERS MIGRATION; COULOMB CORRELATION EFFECTS; COULOMB REPULSION; DIELECTRIC TRAPPING LAYER; HOT CARRIERS THERMALIZATION; MEMORY TRANSISTORS; MOLECULAR DYNAMIC SIMULATION;

COMPUTER SIMULATION;

EID: 0038518236     PISSN: 09281045     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1023263211127     Document Type: Article

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